11

Top-gate TFTs using 13.56 MHz PECVD microcrystalline silicon

Year:
2005
Language:
english
File:
PDF, 142 KB
english, 2005
25

Intrinsic and Doped m c-Si:H TFT Layers using 13.56 MHz PECVD at 250°C

Year:
2004
Language:
english
File:
PDF, 118 KB
english, 2004
31

Light Induced Effects in A-Si:H Films Alloyed with Sulfur

Year:
1997
Language:
english
File:
PDF, 319 KB
english, 1997